ABSOLUTE MAXIMUM RATINGS
Value 2N3108 60 Symbol VCEO VCBO VEBO IC PD TJ TStg Ratings Collector-Emitter IB =0 Voltage Collector-Base Voltage IE =0 Emitter-Base Voltage IC =0 Collector Current T = 25° Total Power Dissipation amb Tcase = 25° Junction Temperature Storage Temperature range 2N3110 40 80 5 1 0.8 5 -65 to +150 -65 to +150 Unit V V V A W °C 100 THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to ambient Thermal Resistance, Junction to case Value 219 35 Unit °C/W °C/W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - NPN 2N3108 – 2N3110 ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified Symbol ICBO ICES IEBO VCBO VCEO VEBO VCE(SAT) VBE(SAT) hFE Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter saturation Voltage Base-Emitter saturation Voltage DC Current Gain Test Condition(s) VCB = 60 V, IE = 0 T...
Comset Semiconductor
