Comset Semiconductor 2N3227
The 2N3227 are silicon NPN silicon annular transistors for low-current, high-speed switching applications. They are mounted in Jedec TO-18 metal.| Part No. | 2N3227 |
|---|---|
| Datasheet | 2N3227 Download |
| Manufacturer |  Comset Semiconductor |
| Description | SILICON ANNULAR TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Symbol VCBO VCEO VEBO VCES IC (peak) PD PD TJ TStg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector-Emitter Voltage Ratings Value 40 20 6 40 500 0.36 2.06 1.2 6.85 +200 -65 to +200 Unit V V V V mA Watts mW/°C Watts mW/°C °C Collector Current TOTAL Device Dissipation Ambient Temperature Derating Factore Above TOTAL Device Dissipation Case Temperature . Derating Factore Above Junction Temperature Storage Temperature range @ TC 25° @ TC 25° = = NPN 2N3227ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol ICBO ICEX IBL BVCBO BVEBO BVCEO BVCES Ratings Collector cut-off current Collector cut-off curren Base cut-off curren Collector-Base Breakdown voltage Emitter-Base Breakdown voltage Collector-Emitter Breakdown voltage (1) Collector-Emitter voltage Test Condition(s) IE = 0 ; VCB = 20V IE = 0 ; VCB = 20V ; TA = 150°C VCE = 20V ; VEB(off) = 3V VCE = 20V ; VEB(off) = 3V IC =10 µA ; IB = 0 IE =10 µA ; IC = 0 IC = 10 mA IC =1...