Comset Semiconductor 2N4347
High Power Industrial Transistors
ABSOLUTE MAXIMUM RATINGS
Symbol VCEO VCB VEB Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous IC Collector Current Peak Continuous IB Base Current Peak Total Device Dissipation Junction Temperature Storage Temperature @ TC = 25° Derate above 25° Ratings 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 Value 120 140 140 160 7 5 10 10 15 (**) 3 7 8 100 117 0.57 0.67 -65 to +200 Unit V V V A A W W/°C °C °C PD TJ TS (**) This data guaranteed in addition to JEDEC registered data. THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case 2N4347 2N3442 Value 1.75 1.5 Unit °C/W 1 Datasheet pdf - NPN 2N3442 – 2N4347ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol VCEO(SUS) ICEO Ratings Collector-Emitter Sustaining Voltage (*) Collector-Emitter Current Test Condition(s) IC=200 mA, IB=0 2N4347 2N3442 2N4347 2N3442 Min 120...