Comset Semiconductor BC262
The BC262 is intended for general purpose applications. The BC262 is intended for low noise, high gain pre-amplifier tage.ABSOLUTE MAXIMUM RATINGS
Symbol VCEO VCES VEBO IC ICM PD TJ TStg Collector-Emitter Voltage (IB =0) Collector- Emitter Voltage (VBE =0) Emitter-Base Voltage (IC =0) Collector Current Collector Peak Current Total Power Dissipation @ Tamb = 25° Junction Temperature Storage Temperature range BC261 BC262 BC263 Unit -45 -25 -25 -50 -30 -30 -5 -100 -200 300 175 -55 to +150 V V V mA mA mW °C °CELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified Symbol Ratings Test Condition(s) ICBO VCEO VCES VEBO Collector Cutoff Current IE = 0 Collector-Emitter Breakdown Voltage VCB =-45 V VCB = -45 V Tj = 150°C VCB =-20 V VCB = -20 V Tj = 150°C IC = -2 mA IB = 0 Collector- Emitter Voltage IC = -10 µA (VBE =0) VBE = 0 Emitter-Base Breakdown IE = -10 µA Voltage IC = 0 BC261 BC261 BC262 BC263 BC262 BC263 BC261 BC262 BC263 BC261 BC262 BC263 BC261 BC262 BC263 Min - - - -45 -25 -25 -50 -30 -30 -5 18/10/2012 COMSET SEMICONDUCTORS Typ Max Unit - -50 nA - -50 µA - -50 nA - -50 µA -- -V --- -V -- - -V 1|3 P...