TIC226B Datasheet PDF | Comset Semiconductor

Comset Semiconductor TIC226B

This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.

Part No.	TIC226B
Datasheet	TIC226B Download
Manufacturer	Comset Semiconductor
Description	SILICON BIDIRECTIONAL TRIODE THYRISTOR
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DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

Value A VDRM Symbol Ratings B C Unit M S N V A A A A W W °C °C °C D E Repetitive peak off-state voltage 100 200 300 400 500 600 700 800 (see Note1) Full-cycle RMS on-state current at (or 8 IT(RMS) below) 70°C case temperature (see note2) Peak on-state surge current full-sine-wave 70 ITSM (see Note3) Peak on-state surge current half-sine-wave 8 ITSM (see Note4) Peak gate current ±1 IGM Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤200 2.2 PGM µs) Average gate power dissipation at (or 0.9 PG(AV) below) 85°C case (see Note5) Operating case temperature range -40 to +110 TC Storage temperature range -40 to +125 Tstg Lead temperature 1.6 mm from case for 10 230 TL seconds Page 1 of 3 SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S Notes: 1. 2. 3. 4. 5. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at the rate of 320 mA/°C.