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TIC108S - SILICON CONTROLLED RECTIFIERS

Download the TIC108S datasheet PDF. This datasheet also covers the TIC108 variant, as both devices belong to the same silicon controlled rectifiers family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (TIC108_ComsetSemiconductors.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TIC108S
Manufacturer Comset Semiconductors
File Size 250.78 KB
Description SILICON CONTROLLED RECTIFIERS
Datasheet download datasheet TIC108S Datasheet

Full PDF Text Transcription for TIC108S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TIC108S. For precise diagrams, and layout, please refer to the original PDF.

SEMICONDUCTORS TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M, TIC108N, TIC108S SILICON CONTROLLED RECTIFIERS • • • • • • 5 A Continuous On-State Current 20 A Surge...

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LLED RECTIFIERS • • • • • • 5 A Continuous On-State Current 20 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 1 mA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value A VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Notes: 1. 2. 3. 4. 5. 21/06/2012 Page 1 of 3 These values apply when the gate-cathode resistance RGK = 1kΩ These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate linearly to zero at 110°