Datasheet4U Logo Datasheet4U.com

CMBD4150 - SILICON PLANAR EPITAXIAL HIGH SPEED DIODE

📥 Download Datasheet

Datasheet preview – CMBD4150

Datasheet Details

Part number CMBD4150
Manufacturer Continental Device India Limited
File Size 177.47 KB
Description SILICON PLANAR EPITAXIAL HIGH SPEED DIODE
Datasheet download datasheet CMBD4150 Datasheet
Additional preview pages of the CMBD4150 datasheet.

📁 Similar Datasheet

  • CMBD2004 - High voltage switching (double) diodes (Cystech Electonics)
  • CMBD2004 - High voltage switching (double) diodes (Cystech Electonics)
  • CMBD2004A - High voltage switching (double) diodes (Cystech Electonics)
  • CMBD2004A - High voltage switching (double) diodes (Cystech Electonics)
  • CMBD2004C - High voltage switching (double) diodes (Cystech Electonics)
  • CMBD2004C - High voltage switching (double) diodes (Cystech Electonics)
  • CMBD2004SN3 - High voltage switching (double) diodes (Cystech Electonics)
  • CMBD2004SN3 - High voltage switching (double) diodes (Cystech Electonics)
  • CMBD7000N3 - High -speed double diode (Cystech Electonics)
  • CMBD914 - SURFACE MOUNT ZENER DIODE (Rectron Semiconductor)
Other Datasheets by Continental Device India Limited
  • CMBD4150 - SILICON PLANAR EPITAXIAL HIGH SPEED DIODE
  • CMBD4148 - SILICON PLANAR EPITAXIAL HIGH SPEED DIODES
  • CMBD4148 - SILICON PLANAR EPITAXIAL HIGH SPEED DIODES
  • CMBD4448 - SILICON PLANAR SWITCHING DIODE
  • CMBD4448 - SILICON PLANAR SWITCHING DIODE
  • CMBD1201 - SILICON PLANAR EPITAXIAL HIGH SPEED DIODES
  • CMBD1201 - SILICON PLANAR EPITAXIAL HIGH SPEED DIODES
  • CMBD1202 - SILICON PLANAR EPITAXIAL HIGH SPEED DIODES

Full PDF Text Transcription

Click to expand full text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company www.DataSheet4U.com SOT-23 Formed SMD Package CMBD4150 SILICON PLANAR EPITAXIAL HIGH SPEED DIODE Marking CMBD4150 = D18 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 3 ABSOLUTE MAXIMUM RATINGS Continuous reverse voltage Repetitive peak reverse voltage Repetitive peak forward current Junction temperature Peak forward surge current T = 1 µsec. T = 1 sec. Reverse recovery time when switched from IF = 400 mA to IR = 400 mA; RL = 100 Ω measured at IR = 4 mA VR VRRM IFRM Tj IFSM IFSM max. max. max. max. max. 50 75 600 150 4 0.5 V V mA °C A A Trr max.
Published: |