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CMBD99 - SILICON EPITAXIAL GENERAL SWITCHING DIODE

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Repetitive Peak Reverse Voltage Continuous Reverse Voltage Non- Repetitive Peak Forward Current t=1us Peak Forward Current Average Forward Current Power Dissipation Ta=25 deg C Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (per diode) DESCRIPTION Reverse Voltage Leakage Current

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Datasheet Details

Part number CMBD99
Manufacturer Continental Device India Limited
File Size 213.17 KB
Description SILICON EPITAXIAL GENERAL SWITCHING DIODE
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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company www.DataSheet4U.com SILICON EPITAXIAL GENERAL SWITCHING DIODE CMBD99 SOT-23 Pin Configuration 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE 3 MARKING : C7 1 2 Silicon Epitaxial General Switching Double Diode Series. ABSOLUTE MAXIMUM RATINGS (per diode) DESCRIPTION Repetitive Peak Reverse Voltage Continuous Reverse Voltage Non- Repetitive Peak Forward Current t=1us Peak Forward Current Average Forward Current Power Dissipation Ta=25 deg C Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (per diode) DESCRIPTION Reverse Voltage Leakage Current Forward Voltage SYMBOL VALUE VRM 35 VR 30 IFSM 4.
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