CSB631
CSB631 is PNP PLASTIC POWER TRANSISTORS manufactured by Continental Device India Limited.
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified pany
TO-126 (SOT-32) Plastic Package
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CSB631, CSB631K CSD600, CSD600K
CSB631, 631K CSD600, 600K
PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS
Low frequency Power Amplifier and Medium Speed Switching Applications
PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE
2 3
ALL DIMENSIONS IN MM
ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 0.5 A; IB = 50 m A D.C. current gain IC = 50 m A; VCE = 5 V VCBO VCEO IC PC Tj VCEsat h FE
631 631K 600 600K max. 100 120 V max. 100 120 V max. 1.0 A max. 8.0 W max. 150 °C max. min. max. 0.4 60 320 V
RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) VCBO Collector-emitter voltage (open base) VCEO max. 100 max. 100
120 V 120 V
Continental Device India Limited
Data Sheet
Page 1 of 3
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CSB631, CSB631K CSD600, CSD600K
Emitter-base voltage (open collector) Collector current Collector current (peak) Total power dissipation up to TA = 25°C Total power dissipation up to TC = 25°C Junction temperature Storage temperature CHARACTERISTICS T amb = 25°C unless otherwise specified Collector cutoff current IE = 0; VCB = 50 V Emitter cut-off current IC = 0; VEB = 4 V Breakdown voltages IC = 1 m A; IB = 0 IC = 10 µA; IE = 0 IE = 10 µA; IC = 0 Saturation voltages IC = 500 m A; IB = 50 m A D.C. current gain IC = 50 m A; VCE = 5 V IC = 500 m A; VCE = 5 V Transition frequency IC = 50 m A; VCE = 10 V Output capacitance VCB = 10 V; IE = 0; f = 1 MHz
VEBO IC ICP PC PC Tj T stg max. 5.0 max. 1.0 max. 2.0 max. 1.0 max. 8.0 max. 150
- 65 to +150
631 600
631K 600K V A m A W W ºC ºC
631 600 ICBO IEBO VCEO VCBO VEBO VCEsat VBEsat h FE- h FE max. max. min. min. min. max. max. min. max. min. typ. typ. typ. typ. 100 100 1.0 1.0
631K 600K µA...