CSC2712 Datasheet | Continental Device India Limited

Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor .. Marking CSC2712Y=1E CSC2712GR(G)=1F CSC2712BL(L)=1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (peak value) Total power dissipation at Tamb = 25°C Junction temperature D.C. current gain - IC = 2 m A; - VCE = 6V Transition frequency IC = 1 m A; VCE = 10 V Noise figure at RS = 10 KW IC = 0.1 m A; VCE = 6V; f = 1 k Hz VCBO VCEO VEBO IC Ptot Tj h FE max. max. max. max. max. max. min. max. min. 60 50 5 150 150 150 70 700 V V V m A m W °C f T 80 MHz F max 10 d B Continental Device India Limited Data Sheet Page 1 of 3 .. RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (d.c.) Base current Total power dissipation at Tamb = 25°C Junction temperature Storage temperature VCBO VCEO VEBO IC IB Ptot Tj Tstg max. 60 max. 50 max. 5 max. 150 max. 30 max. 150 max. 150 - 50 to +150 V V V m A m A m W °C °C CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector cut-off current ICBO IE = 0; VCB = 60 V Emitter cut-off current IC = 0; VEB = 5 V Saturation voltage IC = 100 m A; IB = 10 m A D.C. current gain IC = 2 m A; VCE = 6 V IEBO VCEsat h FE Y GR(G) BL(L) max. max. max. min. max. min. max. min. max. min. max. 100 n A 100 n A 250 m V 70 700 120 240 200 400 350 700 Transition frequency IC = 1 m A; VCE = 10 V Noise figure at Rg = 10 k W VCE = 6 V; IC = 0.1 m A f = 1 k Hz f T min. 80 MHz NF max. 10 d B Continental Device India Limited Data Sheet Page 2 of...