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CSD1426F - NPN HIGH VOLTAGE SILICON POWER TRANSISTORS

General Description

SYMBOL VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage IC Collector Current -Continuous IE Emitter Current PC Collector Power Dissipation @ Tc=25ºC Tj Junction Temperature Tstg Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwi

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Datasheet Details

Part number CSD1426F
Manufacturer Continental Device India Limited
File Size 138.90 KB
Description NPN HIGH VOLTAGE SILICON POWER TRANSISTORS
Datasheet download datasheet CSD1426F Datasheet

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www.datasheet4u.com Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 NPN HIGH VOLTAGE SILICON POWER TRANSISTORS CSD1426F TO-3P Fully Isolated Plastic Package B C E Colour TV Horizontal Output Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage IC Collector Current -Continuous IE Emitter Current PC Collector Power Dissipation @ Tc=25ºC Tj Junction Temperature Tstg Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION ICBO VCB=500V, IE=0 Collector Cut off Current VEBO IE=200mA, IC=0 Emitter Base Breakdown Voltage hFE IC=0.