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CFB1370 - PNP Silicon Epitaxial Power Transistor

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Description

SYMBOL VALUE VCBO 60 Collector -Base Voltage VCEO 60 Collector -Emitter Voltage VEBO 5.0 Emitter- Base Voltage IC 3.0 Collector Current ICP 6.0 Peak PC 2.0 Power Dissipation @ Ta=25 deg C 30 Power Dissipation @ Tc=25 deg C Tj 150 Junction Temperature Tstg -55 to +150 Storage Temperature Range ELECTR

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Datasheet Details

Part number CFB1370
Manufacturer Continental Device
File Size 40.79 KB
Description PNP Silicon Epitaxial Power Transistor
Datasheet download datasheet CFB1370 Datasheet
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    Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 PNP SILICON EPITAXIAL POWER TRANSISTOR CFB1370 (9AW) TO-220FP Designed For AF Power Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE VCBO 60 Collector -Base Voltage VCEO 60 Collector -Emitter Voltage VEBO 5.0 Emitter- Base Voltage IC 3.0 Collector Current ICP 6.0 Peak PC 2.
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