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CSB1370 Datasheet PNP Silicon Epitaxial Power Transistor

Manufacturer: Continental Device

Overview: Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 PNP SILICON EPITAXIAL POWER TRANSISTOR CSB1370 (9AW) TO-220 MARKING : AS BELOW Designed For AF Power Amplifier.

Datasheet Details

Part number CSB1370
Manufacturer Continental Device
File Size 89.40 KB
Description PNP Silicon Epitaxial Power Transistor
Datasheet CSB1370_ContinentalDevice.pdf

General Description

SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter- Base Voltage IC Collector Current ICP Peak PC Power Dissipation @ Ta=25 deg C Power Dissipation @ Tc=25 deg C Tj Junction Temperature Tstg Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION VCEO IC=1mA, IB=0 Collector Emitter Voltage VCBO IC=50uA, IE=0 Collector Base Voltage VEBO IE=50uA,IC=0 Emitter Base Voltage ICBO VCB=60V, IE=0 Collector Cut off Current IEBO VEB=4V,IC=0 Emitter Cut off Current VCE(Sat) IC=2A,IB=0.2A Collector Emitter Saturation Voltage VBE(Sat) IC=2A, IB=0.2A Base Emitter Saturation Voltage hFE IC=0.5A, VCE=5V DC Current Gain Dynamic Characteristics ft VCE=5V,IC=0.5A, Transition Frequency f=5MHz Cob VCB=10V, IE=0 Collector Output Capacitance f=1MHz hFE CLASSIFICATION:MARKING : D : 60 -120;

CSB 1370 D E : 100 -200 CSB 1370 E VALUE 60 60 5.0 3.0 6.0 2.0 30 150 -55 to +150 MIN 60 60 5.0 60 TYP 15 80 MAX 10 10 1.5 1.5 320 UNIT V V V A A W W deg C deg C UNIT V V V uA uA V V MHz pF F : 160 -320 CSB 1370 F Continental Device India Limited Data Sheet Page 1 of 3 TO-220 Plastic Package C E D IM A B C D E F G H J K L M N O M IN .

M AX .

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