CSB1370 - PNP Silicon Epitaxial Power Transistor

General Description

SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter- Base Voltage IC Collector Current ICP Peak PC Power Dissipation @ Ta=25 deg C Power Dissipation @ Tc=25 deg C Tj Junction Temperature Tstg Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specif

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CSB1370 pnp silicon epitaxial power transistor by Continental Device - Datasheet Preview

Datasheet Details

Part number	CSB1370
Manufacturer	Continental Device
File Size	89.40 KB
Description	PNP Silicon Epitaxial Power Transistor
Datasheet	CSB1370 Datasheet

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Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 PNP SILICON EPITAXIAL POWER TRANSISTOR CSB1370 (9AW) TO-220 MARKING : AS BELOW Designed For AF Power Amplifier.