CGT65R032T1 Overview
CGT65R032T1 Descriptions TOLL GaN-on-Silcon E-mode Transistor Type/Ordering Code Package CGT65R032T1 TOLL E-mode 650V, 25mΩ typ., GaN HEMT T1 in TOLL Datasheet - production data Key Performance Parameters Parameters Value Unit BVDSS 650 V RDS(on),max 32 mΩ.
CGT65R032T1 Key Features
- 650 V enhancement mode power transistor
- Ultra-low FOM
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 / +10 V)
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss