CGT65R032T1
Features
- 650 V enhancement mode power transistor
- Ultra-low FOM
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 / +10 V)
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
Applications
- On Board Chargers
- Traction Drive
- DC-DC Converters
- Industrial Motor Drives
- Solar Inverters
- Bridgeless Totem Pole PFC
Marking 65R032T1
Related Links See Appendix A
1 .coolsemi.
Rev. 1.0, 2023-11-30
650V E-mode Ga N HEMT
Absolute Maximum Ratings (Tcase = 25 °C except as noted)
Parameter
Symbol
Value
Unit
Operating Junction Temperature Storage Temperature Range Drain-to-Source Voltage Transient Drain-to-Source Voltage (Note 1)
-55 to +150
°C
-55 to +150
°C
VDS(transient)
Gate-to-Source Voltage
-10 to +...
