• Part: CGT65R032T1
  • Manufacturer: CoolSemi
  • Size: 1.56 MB
Download CGT65R032T1 Datasheet PDF
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CGT65R032T1 Key Features

  • 650 V enhancement mode power transistor
  • Ultra-low FOM
  • Simple gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 / +10 V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse conduction capability
  • Zero reverse recovery loss

CGT65R032T1 Description

CGT65R032T1 Descriptions TOLL GaN-on-Silcon E-mode Transistor Type/Ordering Code Package CGT65R032T1 TOLL E-mode 650V, 25mΩ typ., GaN HEMT T1 in TOLL Datasheet - production data Key Performance Parameters Parameters Value Unit BVDSS 650 V RDS(on),max 32 mΩ.