CGT65R032T1 - E-mode 650V GaN HEMT

Datasheet Summary

Description

TOLL GaN-on-Silcon E-mode Transistor Type/Ordering Code Package CGT65R032T1 TOLL E-mode 650V, 25mΩ typ., GaN HEMT T1 in TOLL Datasheet - production data Key Performance Parameters Parameters Value Unit BVDSS 650 V RDS(on),max 32 mΩ Qg,typ 14 nC IDS,max 60 A IDS,pulse 120 A F

Features

650 V enhancement mode power transistor.
Ultra-low FOM.
Simple gate drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 / +10 V).
Very high switching frequency (> 10 MHz).
Fast and controllable fall and rise times.
Reverse conduction capability.
Zero reverse recovery loss.

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Datasheet Details

Part number	CGT65R032T1
Manufacturer	CoolSemi
File Size	1.56 MB
Description	E-mode 650V GaN HEMT
Datasheet	CGT65R032T1 Datasheet
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CGT65R032T1 Descriptions TOLL GaN-on-Silcon E-mode Transistor Type/Ordering Code Package CGT65R032T1 TOLL E-mode 650V, 25mΩ typ.

Published: Jul 25, 2025 |