CMW120R080M1 - 1200V N-channel SiC MOSFET

General Description

RDS(on),Typ.

Key Features

High Blocking Voltage with Low RDS(ON).
Fast Switching Speed with Low Capacitance.
Robust Design with Better Avalanche Performance.
Simple to Drive.

CMW120R080M1 1200v n-channel sic mosfet by CoolSemi - Datasheet Preview

Datasheet Details

Part number	CMW120R080M1
Manufacturer	CoolSemi
File Size	1.27 MB
Description	1200V N-channel SiC MOSFET
Datasheet	CMW120R080M1 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
CMW100D	Disc Ceramic Capacitors	Mallory
CMW101J	Disc Ceramic Capacitors	Mallory
CMW220J	Disc Ceramic Capacitors	Mallory
CMW391J	Disc Ceramic Capacitors	Mallory
CMW470J	Disc Ceramic Capacitors	Mallory

Other Datasheets by CoolSemi

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

1. Descriptions TO-247 G DS N-Channel MOSFET CMW120R080M1 N-channel 1200V, 80mΩ typ, Coolin SiC MOS M1 Key Performance Parameters Parameters Value Unit BVDSS 1200 V RDS(on),Typ. 80 mΩ IDS@25℃ 36 A Features • High Blocking Voltage with Low RDS(ON) • Fast Switching Speed with Low Capacitance • Robust Design with Better Avalanche Performance • Simple to Drive Applications • Renewable Energy • EV Battery Chargers • High Voltage DC/DC Converters • Switch Mode Power Supplies Type/Ordering Code Package CMW120R080M1 TO-247-3 Marking CMW120R080M1 Related Links See Appendix A 1 www.coolsemi.com Rev. 1.0, 2021-06-11 1200V Coolin SiC MOS M1 CMW120R080M1 Contents 1. Descriptions .................................................................................................