CT5N65F Datasheet | Coretong

5A 650V N Channel MOSFET N-Channel MOSFET Feactures - VDS =650V - ID =5A @VGS =10V - RDS(ON) (Typ)= 2.0Ω @VGS =10V Applications - Power Supply - PFC - High Current, High Speed Switching Descriptions a These N-channel MOSFET are produced using advanced plane MOSFET Technology, which provides Low on-state resistance,high switching performance and excellent quality. These devices are suitable device for SMPS,high Speed switching and general purpose applications.  高压 High Current, High Speed S Rev_1.8_Nov 2021 .coretong. 1/6 Absolute Maximum Ratings(Ta=25℃) Parameter Drain-Source Voltage Drain Current Drain Current Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Avalanche Current Power Dissipation Operating and Storage Temperature Range Junction to Ambient Junction to Case N-Channel MOSFET Symbol VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGSS EAS EAR IAR PD(Tc=25℃) TJ,TSTG RθJA RθJC Rating 650 5.0 2.6 20 ±30 210 10 4.5 36 -55 to 150 62.5 3.47 Unit V A A A V m J m J A W ℃ ℃/W ℃/W Electrical Characteristics(Ta=25℃) Parameter Symbol Test Conditions Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS=650V...