Description
The KTLP250 series consists of an GaAlAs Light emitter diode and an integrated.
This unit is 8-lead DIP package.
KTLP250 series is suitable for gate driving circuit of IGBT or power MOSFET.
Schematic
18 27
36 45
Features
- s
1. This unit is 8.lead DIP package. 2. Input threshold current: IF=5mA (max. ) 3. Supply current (Icc): 11mA (max. ) 4. Supply voltage (Vcc): 10.
- 35V 5. Output current (IO): ±1.5A (max. ) 6. Switching time (tpLH/tpHL): 0.5µs (max. ) 7. Isolation voltage: 5000Vrms (max. ) 8. MSL class 1 9. Agency Approvals:.
- UL Approved (No. E169586): UL1577.
- c-UL Approved (No. E169586).
- VDE Approved (No. 40020973): DIN EN60747-5-5.