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VDS
1200 V
C2M0080120D
Silicon Carbide Power MOSFET TM
C2M MOSFET Technology
ID @ 25˚C RDS(on)
36 A 80 mΩ
N-Channel Enhancement Mode
Features
Package
• High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Halogen Free, RoHS Compliant
Benefits • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density • Increased System Switching Frequency
TO-247-3
Applications • Solar Inverters • Switch Mode Power Supplies • High Voltage DC/DC Converters • Battery Chargers • Motor Drives • Pulsed Power applications
Part Number C2M0080120D
Package TO-247-3
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
C2M0080120D Datasheet
