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C2M1000170J - Silicon Carbide Power MOSFET

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Cree

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C2M1000170J Silicon Carbide Power MOSFET by Cree - Datasheet Preview — Datasheet preview – C2M1000170J

Datasheet Details

Part number	C2M1000170J
Manufacturer	Cree
File Size	2.24 MB
Description	Silicon Carbide Power MOSFET
Datasheet	C2M1000170J Datasheet
Additional preview pages of the C2M1000170J datasheet.

Product details

Features

High blocking voltage with low RDS(on) Easy to parallel and simple to drive.
Low parasitic inductance.
Low impedance package.
Separate driver source pin.
Ultra-low drain-gate capacitance.
Halogen-Free, RoHS compliant.
Fast intrinsic diode with low reverse recovery (Qrr).
Wide creepage (~7mm) between drain and source Beneﬁts.
Higher system efﬁciency.
Smooth switching waveforms.

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Published: Mar 15, 2018 |