Full PDF Text Transcription for C2M1000170J (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
C2M1000170J. For precise diagrams, and layout, please refer to the original PDF.
C2M1000170J Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • • High blocking voltage with low RDS(on) Easy to parallel and simpl...
View more extracted text
• • High blocking voltage with low RDS(on) Easy to parallel and simple to drive • Low parasitic inductance • Low impedance package • Separate driver source pin • Ultra-low drain-gate capacitance • Halogen-Free, RoHS compliant • Fast intrinsic diode with low reverse recovery (Qrr) • Wide creepage (~7mm) between drain and source Benefits • Higher system efficiency • Smooth switching waveforms • Reduced cooling requirements • Minimum gate ringing • Increased system reliability Applications • Auxiliary power supplies • Switch Mode Power Supplies • High-voltage capacitive loads Package VDS ID @ 25˚C RDS(on) 1700 V 5.3 A 1.
C2M1000170J Datasheet
