Click to expand full text
C2M1000170J
Silicon Carbide Power MOSFET C2MTM MOSFET Technology
N-Channel Enhancement Mode
Features
• •
High blocking voltage with low RDS(on) Easy to parallel and simple to drive
• Low parasitic inductance
• Low impedance package
• Separate driver source pin
• Ultra-low drain-gate capacitance
• Halogen-Free, RoHS compliant
• Fast intrinsic diode with low reverse recovery (Qrr)
• Wide creepage (~7mm) between drain and source
Benefits
• Higher system efficiency • Smooth switching waveforms • Reduced cooling requirements • Minimum gate ringing • Increased system reliability
Applications • Auxiliary power supplies • Switch Mode Power Supplies • High-voltage capacitive loads
Package
VDS ID @ 25˚C RDS(on)
1700 V 5.3 A 1.
C2M1000170J Datasheet
