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C3D30065D - Silicon Carbide Schottky Diode

Datasheet Summary

Features

  • Package VRRM =  650 V IF (TC=135˚C) =   36 A.
  • Qc =  89 nC.
  • 650 Volt Schottky Rectifier.
  • Zero Reverse Recovery Current.
  • Zero Forward Recovery Voltage.
  • High-Frequency Operation.
  • Temperature-Independent Switching Behavior.
  • Extremely Fast Switching.
  • Positive Temperature Coefficient on VF Benefits TO-247-3.
  • Replace Bipolar with Unipolar Rect.

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Datasheet Details

Part number C3D30065D
Manufacturer Cree
File Size 691.62 KB
Description Silicon Carbide Schottky Diode
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C3D30065D Silicon Carbide Schottky Diode Z-Rec® Rectifier Features Package VRRM =  650 V IF (TC=135˚C) =   36 A** Qc =  89 nC** • 650 Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits TO-247-3 • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • Higher Efficiency • Reduction of Heat Sink Requirements • Parallel Devices Without Thermal Runaway Applications • Switch Mode Power Supplies (SMPS) • Boost diodes in PFC or DC/DC stages • Free Wheeling Diodes in Inverter stages • AC/DC converters Maximum Rati
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