Datasheet Summary
1.7kV, 8.0 mΩ All-Silicon Carbide
Half-Bridge Module
C2M MOSFET and Z-RecTM Diode
VDS1.7 kV
Esw, Total @ 300A, 150 ˚C
23 mJ
RDS(on)
8.0 mΩ
Features
- Ultra Low Loss
- High-Frequency Operation
- Zero Reverse Recovery Current from Diode
- Zero Turn-off Tail Current from MOSFET
- Normally-off, Fail-safe Device Operation
- Ease of Paralleling
- Copper Baseplate and Aluminum Nitride Insulator
System Benefits
- Enables pact and Lightweight Systems
- High Efficiency Operation
- Mitigates Over-voltage Protection
- Reduced Thermal Requirements
- Reduced System Cost
Package 62mm x 106mm x 30mm
Applications
- HF Resonant Converters/Inver...
