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CAS300M17BM2 - All-Silicon Carbide Half-Bridge Module

Key Features

  • Ultra Low Loss.
  • High-Frequency Operation.
  • Zero Reverse Recovery Current from Diode.
  • Zero Turn-off Tail Current from MOSFET.
  • Normally-off, Fail-safe Device Operation.
  • Ease of Paralleling.
  • Copper Baseplate and Aluminum Nitride Insulator System Benefits.
  • Enables Compact and Lightweight Systems.
  • High Efficiency Operation.
  • Mitigates Over-voltage Protection.
  • Reduced Thermal Requirements.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CAS300M17BM2 1.7kV, 8.0 mΩ All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-RecTM Diode VDS 1.7 kV Esw, Total @ 300A, 150 ˚C 23 mJ RDS(on) 8.