Datasheet4U Logo Datasheet4U.com

CFG40006S - RF Power GaN HEMT

Datasheet Summary

Features

  • Up to 6 GHz Operation.
  • 13 dB Small Signal Gain at 2.0 GHz.
  • 11 dB Small Signal Gain at 6.0 GHz.
  • 8 W typical at PIN = 32 dBm.
  • 65 % Efficiency at PIN = 32 dBm.
  • 28 V Operation.
  • 3mm x 3mm Package.

📥 Download Datasheet

Datasheet preview – CFG40006S

Datasheet Details

Part number CFG40006S
Manufacturer Cree
File Size 1.65 MB
Description RF Power GaN HEMT
Datasheet download datasheet CFG40006S Datasheet
Additional preview pages of the CFG40006S datasheet.

📁 Similar Datasheet

  • CFG455B - FILTERS (Murata Electronics)
  • CFG455C - FILTERS (Murata Electronics)
  • CFG455D - FILTERS (Murata Electronics)
  • CFG455E - FILTERS (Murata Electronics)
  • CFG455E10 - FILTERS (Murata Electronics)
  • CFG455F - FILTERS (Murata Electronics)
  • CFG455G - FILTERS (Murata Electronics)
  • CFG455H - FILTERS (Murata Electronics)
  • CFG455I - FILTERS (Murata Electronics)
  • CFG455J - FILTERS (Murata Electronics)
Other Datasheets by Cree

    Full PDF Text Transcription

    Click to expand full text
    CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006S ideal for linear and compressed amplifier circuits. The transistor is available in a 3mm x 3mm, surface mount, quad-flat-no-lead (QFN) package. PackaPgNe’sT:yCpeGsH: 4404000260S3 FEATURES • Up to 6 GHz Operation • 13 dB Small Signal Gain at 2.0 GHz • 11 dB Small Signal Gain at 6.
    Published: |