Overview: CGH35060F1 / CGH35060P1
60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.6 GHz WiMAX and BWA linear amplifier applications. The transistor is supplied in a ceramic/ metal flange and pill package. Cree GaN-on-SiC HEMTs are highly correctable, enabling even greater efficiency when used with digital pre-distortion (DPD). PPNa: cCkGaHge35T0y6p0eF: 414&01C9G3H&354046001P916 Typical Performance Over 3.3-3.6GHz (TC = 25˚C) of Demonstration Amplifier Parameter 3.3 GHz 3.4 GHz 3.5 GHz Small Signal Gain 11.7 12.2 12.6 3.6 GHz 12.8 EVM @ 26 dBm 2.05 1.82 1.56 1.80 EVM @ 39 dBm 1.91 1.83 1.98 2.86 Drain Efficiency @ 39 dBm 22.0 23.1 24.9 26.7 Input Return Loss 8.0 10.3 12.5 13.1 Note: Measured in the CGH35060F1-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
