CGH35240F Description
CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package....
CGH35240F Key Features
- 3.5 GHz Operation
- 240 W Typical Output Power
- 11.6 dB Power Gain at PIN = 42.0 dBm
- 57 % Typical Power Added Efficiency
- 50 Ohm Internally Matched
- <0.2 dB Pulsed Amplitude Droop
- December 2015