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CGH35240F - GaN HEMT

General Description

RES, 511 OHM, +/- 1%, 1/16W,0603 RES, 5.1,OHM, +/- 1%, 1/16W,0603 CAP, 10.0pF, +/-5%,250V, 0603, CAP, 6.8pF, +/- 0.25 pF,250V, 0603 CAP, 470PF, +/-5%, 100V, 0603, X CAP, 33 UF, 20%, G CASE CAP,33000PF, 0805,100V, X7R CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 10pF, +/- 1%, 250V, 080

Key Features

  • 3.1 - 3.5 GHz Operation.
  • 240 W Typical Output Power.
  • 11.6 dB Power Gain at PIN = 42.0 dBm.
  • 57 % Typical Power Added Efficiency.
  • 50 Ohm Internally Matched.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. PackaPgeN:TCypGeH: 3454204200F1 Typical Performance Over 3.1-3.5GHz (TC = 25˚C) of Demonstration Amplifier Parameter 3.1 GHz 3.2 GHz 3.3 GHz 3.4 GHz Output Power 250 240 225 225 3.5 GHz 220 Gain 12.1 11.9 11.6 11.5 11.4 Power Added Efficiency 60 59 57 52 Note: Measured in the CGH35240F-AMP amplifier circuit, under 300 μs pulse width, 20% duty cycle, PIN = 42 dBm.