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CGH40180PP - RF Power GaN HEMT

General Description

RES, 100 Ohm, +/-1%, 1 W, 2512 RES, 511 Ohm, +/- 5%, 1/16W, 0603 RES, 1/16W, 0603, 1%, 5.1 OHMS CAP, 27 pF,+/-5% 0805,ATC600F CAP, 3.9PF, +/-0.1 pF, 0603, ATC600S CAP, 3.3PF, +/-0.1 pF, 0603, ATC600S CAP, 1.8PF, +/-0.1 pF, 0603, ATC600S CAP, 1.0PF, +/-0.1 pF, 0603, ATC600S CAP, 0.9PF, +/-0.1 pF, 060

Key Features

  • Up to 2.5 GHz Operation.
  • 20 dB Small Signal Gain at 1.0 GHz.
  • 15 dB Small Signal Gain at 2.0 GHz.
  • 220 W typical PSAT.
  • 70 % Efficiency at PSAT.
  • 28 V Operation.

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📁 Similar Datasheet

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Other Datasheets by Cree (now Wolfspeed)

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CGH40120F RF Power GaN HEMT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40180PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package. PackaPgNe:TCyGpeHs4:04148001P9P9 FEATURES • Up to 2.5 GHz Operation • 20 dB Small Signal Gain at 1.0 GHz • 15 dB Small Signal Gain at 2.