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CGH60015D Datasheet Gan Hemt Die

Manufacturer: Cree (now Wolfspeed)

Overview: CGH60015D 15 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths pared to Si and GaAs transistors.

CGH60015D Distributor