CGH60015D - GaN HEMT Die

Cree

Datasheet Details

Part number	CGH60015D
Manufacturer	Cree
File Size	427.03 KB
Description	GaN HEMT Die
Datasheet	CGH60015D Datasheet
Additional preview pages of the CGH60015D datasheet.

📁 Similar Datasheet

CGH09120F - GaN HEMT (Wolfspeed)
CGH21120F - GaN HEMT (Wolfspeed)
CGH21240F - GaN HEMT (Wolfspeed)
CGH27015 - GaN HEMT (Wolfspeed)
CGH27030 - 82V GaN HEMT (MACOM)
CGH27030 - GaN HEMT (Wolfspeed)
CGH27030S - GaN HEMT (MACOM)
CGH27030S - GaN HEMT (Wolfspeed)
CGH27060F - GaN HEMT (Wolfspeed)
CGH31240F - GaN HEMT (MACOM)

Other Datasheets by Cree

CGH60030D - GaN HEMT Die
CGH27015 - GaN HEMT
CGH27015F - GaN HEMT
CGH27030F - GaN HEMT
CGH27060F - GaN HEMT
CGH31240F - GaN HEMT
CGH35015 - GaN HEMT
CGH35015F - GaN HEMT

Full PDF Text Transcription

Click to expand full text

CGH60015D 15 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

Published: Apr 19, 2016 |