CGH60030D - GaN HEMT Die

Cree

Datasheet Details

Part number	CGH60030D
Manufacturer	Cree
File Size	501.62 KB
Description	GaN HEMT Die
Datasheet	CGH60030D Datasheet
Additional preview pages of the CGH60030D datasheet.

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Full PDF Text Transcription

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CGH60030D 30 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

Published: Apr 19, 2016 |