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CGHV27100 - GaN HEMT

General Description

RES, 10 OHM, +/- 1%, 1/16 W, 0603 CAP, 5.6 pF, +/- 0.25 pF, 0603, ATC CAP, 27 pF, +/-5%, 0603, ATC CAP, 10.0 pF, +/-5%, 0603, ATC CAP, 8.2 pF, +/-0.25 pF, 0603, ATC CAP, 470 pF, 5%, 100 V, 0603, X CAP, 33000 pF, 0805, 100 V, X7R CAP, 10 UF, 16 V, TANTALUM CAP, 27 pF, +/-5%, 250 V, 0805, ATC 600 F CA

Key Features

  • 2.5 - 2.7 GHz Operation.
  • 18.0 dB Gain.
  • -37 dBc ACLR at 25 W PAVE.
  • 33 % Efficiency at 25 W PAVE.
  • High Degree of DPD Correction Can be Applied Rev 1.0.
  • May 2015 Subject to change without notice. www. cree. com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drai.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 - 2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is input matched and supplied in a ceramic/ metal pill and flange packages. PNPa: CckGaHgVe2T7y1p0e0: F44a0n1d6C2GaHndV2474100106P1 Typical Performance Over 2.5 - 2.7 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.5 GHz 2.6 GHz 2.7 GHz Gain @ 44 dBm 18.1 18.0 17.9 ACLR @ 44 dBm -37.0 -37.0 -37.0 Drain Efficiency @ 44 dBm 34.0 33.5 32.