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CMF10120D - Silicon Carbide Power MOSFET

Key Features

  • Package VDS ID(MAX) = 1200 V = 24 A N-Channel Enhancement Mode RDS(on) = 160mΩ.
  • High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3 Benefits.
  • Higher System Efficiency Reduced Cooling Requirements Increased System Switching Freq.

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Other Datasheets by Cree (now Wolfspeed)

Part Number Description
CMF20120D Silicon Carbide Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CMF10120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET Features Package VDS ID(MAX) = 1200 V = 24 A N-Channel Enhancement Mode RDS(on) = 160mΩ • • • • • • High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3 Benefits • • • Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency Applications • • • • Solar Inverters High Voltage DC/DC Converters Motor Drives Switch Mode Power Supplies Part Number CMF10120D Package TO-247-3 Maximum Ratings (TC = 25˚C unless otherwise specified) Symbol Parameter Continuous Drain Current Value 24 13 49 1.2 0.