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CMF20120D - Silicon Carbide Power MOSFET

Key Features

  • Package VDS ID(MAX) R 1200 V 42 A 80mΩ DS(on) N-Channel Enhancement Mode.
  • High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3 Benefits.
  • Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency.

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CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET Features Package VDS ID(MAX) R 1200 V 42 A 80mΩ DS(on) N-Channel Enhancement Mode • • • • • • High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3 Benefits • • • Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency Applications • • • • • Solar Inverters High Voltage DC/DC Converters Motor Drives Switch Mode Power Supplies UPS Part Number CMF20120D Package TO-247-3 Maximum Ratings (TC = 25˚C unless otherwise specified) Symbol Parameter Continuous Drain Current Value 42 24 90 2.2 1.