CPM2-1200-0040B Datasheet PDF - Cree Silicon Carbide Power MOSFET Specs

CPM2-1200-0040B - Silicon Carbide Power MOSFET

Datasheet Summary

Features

Chip Outline.
New C2M SiC MOSFET technlogy.
High Blocking Voltage with Low On-Resistance.
High Speed Switching with Low Capacitances.
Easy to Parallel and Simple to Drive.
Avalanche Ruggedness.
Resistant to Latch-Up.
Halogen Free, RoHS Compliant Benefits.
Higher System Efficiency.
Reduced Cooling Requirements.
Increased Power Density.
Increased System Switching Frequency.

Datasheet Details

Part number	CPM2-1200-0040B
Manufacturer	Cree
File Size	418.05 KB
Description	Silicon Carbide Power MOSFET
Datasheet	CPM2-1200-0040B Datasheet
Additional preview pages of the CPM2-1200-0040B datasheet.

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Full PDF Text Transcription

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VDS 1200 V CPM2-1200-0040B Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 36 A RDS(on) 40 mΩ N-Channel Enhancement Mode Features Chip Outline • New C2M SiC MOSFET technlogy • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density • Increased System Switching Frequency Applications • Solar Inverters • Switch Mode Power Supplies • High Voltage DC/DC converters • Battery Chargers • Motor Drives • Pulsed Power Applications Part Number CPM2-1200-0040B Die Size (mm) 3.10 x 5.

Published: Apr 10, 2017 |