CPM2-1200-0040B Description
VDS 1200 V CPM2-1200-0040B Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 36 A RDS(on) 40 mΩ N-Channel Enhancement Mode.
CPM2-1200-0040B Key Features
- New C2M SiC MOSFET technlogy
- High Blocking Voltage with Low On-Resistance
- High Speed Switching with Low Capacitances
- Easy to Parallel and Simple to Drive
- Avalanche Ruggedness
- Resistant to Latch-Up
- Halogen Free, RoHS pliant
- Higher System Efficiency
- Reduced Cooling Requirements
- Increased Power Density