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CPM2-1200-0040B - Silicon Carbide Power MOSFET

Key Features

  • Chip Outline.
  • New C2M SiC MOSFET technlogy.
  • High Blocking Voltage with Low On-Resistance.
  • High Speed Switching with Low Capacitances.
  • Easy to Parallel and Simple to Drive.
  • Avalanche Ruggedness.
  • Resistant to Latch-Up.
  • Halogen Free, RoHS Compliant Benefits.
  • Higher System Efficiency.
  • Reduced Cooling Requirements.
  • Increased Power Density.
  • Increased System Switching Frequency.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VDS 1200 V CPM2-1200-0040B Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 36 A RDS(on) 40 mΩ N-Channel Enhancement Mode Features Chip Outline • New C2M SiC MOSFET technlogy • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density • Increased System Switching Frequency Applications • Solar Inverters • Switch Mode Power Supplies • High Voltage DC/DC converters • Battery Chargers • Motor Drives • Pulsed Power Applications Part Number CPM2-1200-0040B Die Size (mm) 3.10 x 5.