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WAS300M12BM2 - All-Silicon Carbide THB-80 Half-Bridge Module

Key Features

  • High Temperature, Humidity, and Bias Operation.
  • Ultra Low Loss.
  • High-Frequency Operation.
  • Zero Reverse Recovery Current from Diode.
  • Zero Turn-off Tail Current from MOSFET.
  • Normally-off, Fail-safe Device Operation.
  • Ease of Paralleling.
  • Copper Baseplate and Aluminum Nitride Insulator System Benefits.
  • Enables Compact, Lightweight, Efficient Systems.
  • Harsh Outdoor Environment Installation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WAS300M12BM2 1.2kV, 4.2 mΩ All-Silicon Carbide THB-80 Half-Bridge Module C2M™ MOSFET and Z-Rec® Diode VDS 1.2 kV Esw, Total @ 300A 12 mJ RDS(on) 4.