CDBAW56W Datasheet | Crownpo

CDSOT323 SERIES Small Signal Switching Diode, SOT323 Case CDBAV99W/ CDBAV70W/ CDBAW56W/ CDMMBD4148W Features - - - - Silicon epitaxial planar diode SMD chip pattern, SOT323 case, available also in SOT23 case Leadfree and Ro HS pliance ponents For small signal switching and operating ambient temperature less than 55o C and voltage withstand less than 60V; not suitable for AC switching input as rectified circuit and high reverse voltage location. Size: SOT323 case Weight: approx. 11mg Marking: BAV99 as anode to cathode series dual switching diode BAV70 as mon cathode dual switching diode BAW56 as mon anode dual switching diode BD4148 as SOT323 case single switching diode CDBAV99W CDBAV70W CDBAW56W CDMMBD4148W MECHANICAL CHARACTERISTICS - - - GRAPHIC SYMBOL DIMENSIONS Dimension/mm L W T C SOT323 2.0±0.2 2.1±0.2 0.85±0.1 0.55±0.2 25-NOV-10 Document No.32021 CDSOT323 SERIES THERMAL CHARACTERISTICS1) Parameter at Tamb=25o C1) Forward Power Dissipation Power derating above 25o C Junction Temperature Thermal Resistance Junction to Ambient air Operating& Storage Temperature range 1) Valid provided that electrodes are kept at ambient temperature. Symbol Ptot Tj RθJA Tstg Value 200 1.6 150 625 -55 to 150 Unit m W m W/ o C o o C C/W o C MAXIMUM RATING1) Parameter at Tamb=25o C1) Repetitive Peak Reverse Voltage Average rectified current sin half wave rectification with resistive load Repetitive Peak Forward Current at Tamb=25°C Non-Repetitive Surge Forward Current at t<1s and Tj=25o C at t≦8.3ms and Tj=25o C 1) 2) 3) Single diode Double diode Symbol VRRM IF(AV) IFRM IFSM Value 75 1502) 1303) 200 500 1000 Unit V m A m A m A m A m A Valid provided that electrodes are kept at ambient temperature. ELECTRICAL CHARACTERISTICS1) Parameter at Tamb=25o C1) Forward Voltage at IF=10m A at IF=50m A at IF=100m A Leakage Current at VR=75V Capacitance at VR=0V,f=1MHz Reverse Recovery Time at IF =IR=10m A,RL=100Ω 1) Valid provided that electrodes are kept at ambient temperature. Sy...