Datasheet Summary
4-8 GHz GaN Low Noise Amplifier
Features
- High gain
- Low noise figure
- High linearity
- High RF power survivability
- Small die size
Description
The CMD219 is a broadband MMIC GaN low noise amplifier ideally suited for microwave radios and C-band applications where small size and high input power survivability are needed. The broadband device delivers greater than 23 dB of gain with a corresponding output 1 dB pression point of +18 dBm and a noise figure of 1 dB. The CMD219 Features a RF input power survivability of greater than 5 Watts. The CMD219 is a 50 ohm matched design eliminating the need for external DC blocks and RF port matching.
Functional Block Diagram
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