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6116A - CY6116A

General Description

the memory location specified on the adĆ dress pins (A 0 through A 10).

Key Features

  • D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V electrostatic discharge The CY6116A and CY6117A are highĆ performance CMOS static RAMs orgaĆ nized as 2048 words by 8 bits. Easy memoryexpansionisprovidedbyanactive LOW chip enable (CE) and active LOW output enable (OE), and threeĆstate drivĆ ers. The CY6116A and CY611.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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6116A: 11/8/89 Revision: Monday, November 8, 1993 www.DataSheet4U.com Features D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V electrostatic discharge The CY6116A and CY6117A are highĆ performance CMOS static RAMs orgaĆ nized as 2048 words by 8 bits. Easy memoryexpansionisprovidedbyanactive LOW chip enable (CE) and active LOW output enable (OE), and threeĆstate drivĆ ers. The CY6116A and CY6117A have an automatic powerĆdown feature, reducing the power consumption by 83% when deĆ selected. Writingtothedeviceisaccomplishedwhen the chip enable (CE) and write enable (WE) inputs are both LOW.