CY14B116L Datasheet PDF - Cypress Semiconductor 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM Specs

CY14B116L - 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM

Datasheet Summary

Description

The C ypress CY14X1 16L/CY14X116N/CY14X116S i s a fast SRAM, with a no nvolatile el ement in each memory cel l.

T he memory is organized as 2048 K bytes of 8 bits each or 1024 K words of 16 bits each o r 512 K words of 32 bit s each .

Features

16-Mbit nonvolatile static random access memory (nvSRAM).
25-ns, 30-ns and 45-ns access times.
Internally organized as 2048 K × 8 (CY14X116L), 1024 K × 16 (CY14X116N), 512 K × 32 (CY14X116S).
Hands-off automatic STORE on power-down with only a small capacitor.
STORE to QuantumTrap nonvolatile elements is initiated by software, device pin, or AutoStore on power-down.
RECALL to SRAM initiated by software or power-up.
High reliability.
Infinite read, write, and RE.

Datasheet Details

Part number	CY14B116L
Manufacturer	Cypress Semiconductor
File Size	1.26 MB
Description	16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM
Datasheet	CY14B116L Datasheet
Additional preview pages of the CY14B116L datasheet.

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Full PDF Text Transcription

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PRELIMINARY CY14B116L/CY14B116N/CY14B116S CY14E116L/CY14E116N/CY14E116S 16-Mbit (2048 K × 8/1024 K × 16/512 K × 32) nvSRAM Features 16-Mbit nonvolatile static random access memory (nvSRAM) ❐ 25-ns, 30-ns and 45-ns access times ❐ Internally organized as 2048 K × 8 (CY14X116L), 1024 K × 16 (CY14X116N), 512 K × 32 (CY14X116S) ❐ Hands-off automatic STORE on power-down with only a small capacitor ❐ STORE to QuantumTrap nonvolatile elements is initiated by software, device pin, or AutoStore on power-down ❐ RECALL to SRAM initiated by software or power-up ■ High reliability ❐ Infinite read, write, and RECALL cycles ❐ 1 million STORE cycles to QuantumTrap ❐ Data retention: 20 years ■ Sleep mode operation ■ Low power consumption ❐ Active current of 75 mA at 45 ns ❐ Standby mode current of 650 A

Published: May 17, 2014 |