CY14C512J Datasheet | Cypress

512-Kbit (64 K × 8) Serial (I C) nv SRAM 512-Kbit (64 K × 8) Serial (I2C) nv SRAM CY14C512J CY14B512J, CY14E512J 2 Features - - 512-Kbit nonvolatile static random access memory (nv SRAM) - Internally organized as 64 K × 8 - STORE to Quantum Trap nonvolatile elements initiated automatically on power-down (Auto Store) or by using I2C mand (Software STORE) or HSB pin (Hardware STORE) - RECALL to SRAM initiated on power-up (Power-Up RECALL) or by I2C mand (Software RECALL) - Automatic STORE on power-down with a small capacitor (except for CY14X512J1) - High reliability Infinite read, write, and RECALL cycles 1 million STORE cycles to Quantum Trap - Data retention: 20 years at 85 C 2 - High speed I C interface - Industry standard 100 k Hz and 400 k Hz speed - Fast-mode Plus: 1 MHz speed - High speed: 3.4 MHz - Zero cycle delay reads and writes - Write protection - Hardware protection using Write Protect (WP) pin - Software block protection for one-quarter, one-half, or entire array 2 - I C access to special functions - Nonvolatile STORE/RECALL - 8 byte serial number - Manufacturer ID and Product ID - Sleep mode - Low power consumption - Average active current of 1 m A at 3.4 MHz operation - Average standby mode current of 150 µA - Sleep mode current of 8 µA - -...