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CY14E116L - 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM

Download the CY14E116L datasheet PDF. This datasheet also covers the CY14B116L variant, as both devices belong to the same 16-mbit (2048 k x 8/1024 k x 16/512 k x 32) nvsram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 16-Mbit nonvolatile static random access memory (nvSRAM).
  • 25-ns, 30-ns and 45-ns access times.
  • Internally organized as 2048K × 8 (CY14X116L), 1024K × 16 (CY14X116N), 512K × 32 (CY14X116S).
  • Hands-off automatic STORE on power-down with only a small capacitor.
  • STORE to QuantumTrap nonvolatile elements is initiated by software, device pin, or AutoStore on power-down.
  • RECALL to SRAM initiated by software or power-up.
  • High reliability.
  • Infinite read, write, and.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY14B116L-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Cypress (now Infineon)

Part Number Description
CY14E116N 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM
CY14E116S 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM
CY14E101I 1-Mbit (128 K x 8) Serial (I2C) nvSRAM
CY14E101J 1-Mbit (128 K X 8) Serial (I2C) nvSRAM
CY14E101PA 1-Mbit (128K x 8) Serial (SPI) nvSRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY14B116L/CY14B116N/CY14B116S CY14E116L/CY14E116N/CY14E116S 16-Mbit (2048K × 8/1024K × 16/512K × 32) nvSRAM 16-Mbit (2048K × 8/1024K × 16/512K × 32) nvSRAM Features ■ 16-Mbit nonvolatile static random access memory (nvSRAM) ❐ 25-ns, 30-ns and 45-ns access times ❐ Internally organized as 2048K × 8 (CY14X116L), 1024K × 16 (CY14X116N), 512K × 32 (CY14X116S) ❐ Hands-off automatic STORE on power-down with only a small capacitor ❐ STORE to QuantumTrap nonvolatile elements is initiated by software, device pin, or AutoStore on power-down ❐ RECALL to SRAM initiated by software or power-up ■ High reliability ❐ Infinite read, write, and RECALL cycles ❐ 1 million STORE cycles to QuantumTrap ❐ Data retention: 20 years ■ Sleep mode operation ■ Low power consumption ❐ Active current of 75 mA at 45 ns ❐