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CY15V102QN - 2-Mbit (256K x 8) Automotive-E Serial (SPI) F-RAM

Download the CY15V102QN datasheet PDF. This datasheet also covers the CY15B102QN variant, as both devices belong to the same 2-mbit (256k x 8) automotive-e serial (spi) f-ram family and are provided as variant models within a single manufacturer datasheet.

Description

The Excelon-Auto CY15X102QN is an automotive grade, 2-Mbit nonvolatile memory employing an advanced ferroelectric process.

A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM.

Features

  • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 8.
  • Virtually unlimited endurance of 10 trillion (1013) read/write cycles.
  • 121-year data retention (see Data Retention and Endurance on page 19).
  • NoDelay™ writes.
  • Advanced high-reliability ferroelectric process.
  • Fast serial peripheral interface (SPI).
  • Up to 50 MHz frequency.
  • Supports SPI mode 0 (0, 0) and mode 3 (1, 1).
  • Sophisticated write protection scheme.
  • Hardware.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY15B102QN-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
CY15V102QN Auto Ferroelectric RAM Infineon
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CY15V108QN LP Ferroelectric RAM Infineon
CY15V116QN 16Mb Auto Ferroelectric RAM Infineon
CY15V116QSN 16Mb Ultra Ferroelectric RAM Infineon

Other Datasheets by Cypress (Infineon)

Part Number Description
CY15B004Q 4-Kbit (512 x 8) Serial (SPI) Automotive F-RAM
CY15B064J 64-Kbit (8K x 8) Serial (I2C) Automotive F-RAM
CY15B064Q 64-Kbit (8K x 8) Serial (SPI) Automotive F-RAM
CY15B101N 1-Mbit (64K x 16) Automotive F-RAM Memory
CY15B102N 2-Mbit (128K x 16) Automotive F-RAM Memory

Full PDF Text Transcription

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CY15B102QN CY15V102QN Excelon™-Auto 2-Mbit (256K × 8) Automotive-E Serial (SPI) F-RAM Excelon™-Auto 2-Mbit (256K × 8) Automotive-E Serial (SPI) F-RAM Features ■ 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 8 ❐ Virtually unlimited endurance of 10 trillion (1013) read/write cycles ❐ 121-year data retention (see Data Retention and Endurance on page 19) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Fast serial peripheral interface (SPI) ❐ Up to 50 MHz frequency ❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1) ■ Sophisticated write protection scheme ❐ Hardware protection using the Write Protect (WP) pin ❐ Software protection using Write Disable (WRDI) instruction ❐ Software block protection for 1/4, 1/2, or entire array ■ Device ID and S
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