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CY6117A Datasheet 2k X 8 Static Ram

Manufacturer: Cypress (now Infineon)

Overview: 6116A: 11/8/89 Revision: Monday, November 8, 1993.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

the memory location specified on the adĆ dress pins (A0 through A10).

ReadingthedeviceisacplishedbytakĆ ing chip enable (CE) and output enable (OE) LOW while write enable (WE) reĆ mainsHIGH.Undertheseconditions,the contents of the memory location specified on the address pins will appear on the I/O pins.

The I/O pins remain in highĆimpedance state when chip enable (CE) is HIGH or write enable (WE) is LOW.

Key Features

  • D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V electrostatic discharge The CY6116A and CY6117A are highĆ performance CMOS static RAMs orgaĆ nized as 2048 words by 8 bits. Easy memoryexpansionisprovidedbyanactive LOW chip enable (CE) and active LOW output enable (OE), and threeĆstate drivĆ ers. The CY6116A and CY611.

More Datasheets from Cypress (now Infineon)

Part Number Description
CY6116A 2K x 8 Static RAM
CY62126ESL 1-Mbit (64 K x 16) Static RAM
CY62126EV30 1-Mbit (64K x 16) Static RAM
CY62127DV30 1-Mbit (64K x 16) Static RAM
CY62128 128K x 8 Static RAM
CY621282BN 1-Mbit (128K x 8) Static RAM
CY62128B 128K x 8 Static RAM
CY62128BN 1-Mbit (128K x 8) Static RAM
CY62128DV30 1-Mb (128K x 8) Static RAM
CY62128E 1-Mbit (128K x 8) Static RAM

CY6117A Distributor