CY62126EV30
Overview
- High speed: 45 ns
- Temperature ranges ❐ Industrial: -40 °C to +85 °C ❐ Automotive-A: -40 °C to +85 °C ❐ Automotive-E: -40 °C to +125 °C
- Wide voltage range: 2.2 V to 3.6 V
- Pin compatible with CY62126DV30
- Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 4 A
- Ultra low active power ❐ Typical active current: 1.3 mA at f = 1 MHz
- Easy memory expansion with CE and OE features
- Automatic power down when deselected
- Complementary metal oxide semiconductor (CMOS) for optimum speed and power
- Offered in Pb-free 48-ball very fine-pitch ball grid array (VFBGA) and 44-pin thin small outline package (TSOP) II packages Functional Description The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This
