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CY62137EV30 - 2-Mbit (128K x 16) Static RAM

Datasheet Summary

Description

The CY62137EV30 is a high performance CMOS static RAM organized as 128K words by 16 bits.

Features

  • Very high speed: 45 ns.
  • Wide voltage range: 2.20 V to 3.60 V.
  • Pin compatible with CY62137CV30.
  • Ultra low standby power.
  • Typical standby current: 1 A.
  • Maximum standby current: 7 A.
  • Ultra low active power.
  • Typical active current: 2 mA at f = 1 MHz.
  • Easy memory expansion with CE and OE features.
  • Automatic power-down when deselected.
  • Complementary metal oxide semiconductor (CMOS) for optimum speed and power.
  • Byte power-down feature.

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Datasheet preview – CY62137EV30

Datasheet Details

Part number CY62137EV30
Manufacturer Cypress Semiconductor
File Size 578.36 KB
Description 2-Mbit (128K x 16) Static RAM
Datasheet download datasheet CY62137EV30 Datasheet
Additional preview pages of the CY62137EV30 datasheet.

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Full PDF Text Transcription

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CY62137EV30 MoBL® 2-Mbit (128 K × 16) Static RAM 2-Mbit (128 K × 16) Static RAM Features ■ Very high speed: 45 ns ■ Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62137CV30 ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A ■ Ultra low active power ❐ Typical active current: 2 mA at f = 1 MHz ■ Easy memory expansion with CE and OE features ■ Automatic power-down when deselected ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Byte power-down feature ■ Offered in Pb-free 48-ball very fine-pitch ball grid array (VFBGA) and 44-pin thin small outline package (TSOP II) package Functional Description The CY62137EV30 is a high performance CMOS static RAM organized as 128K words by 16 bits.
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