CY62146CV18 Datasheet | Cypress

CY62146CV18 Mo BL2™ 256K x 16 Static RAM Features - High Speed - 55 ns and 70 ns availability - Low voltage range: - 1.65V- 1.95V - Pin patible with CY62146BV18 - Ultra-low active power - Typical Active Current: 0.5 m A @ f = 1 MHz - - - - - Typical Active Current: 2 m A @ f = fmax (70 ns speed) Low standby power Easy memory expansion with CE and OE Features Automatic power-down when deselected CMOS for optimum speed/power reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). Writing to the device is acplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A16). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A17). Reading from the device is acplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet for a plete description of read and write modes. The CY62146CV18 is available in a 48-Ball FBGA package. Functional Description The CY62146CV18 is a high-performance CMOS static RAM organized as 256K words by 16 bits. These devices feature advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (Mo BL™) in portable applications such as...