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CY62147DV18 - 4-Mb (256K x 16) Static RAM

Description

of read and write modes.

The CY62147DV18 is available in a 48-ball FBGA package.

The CY62147DV18 is a high-performance CMOS static RAM organized as 256K words by 16 bits.

Features

  • Very high speed: 55 ns and 70 ns Wide voltage range: 1.65V.
  • 2.25V Pin-compatible with CY62147CV18 Ultra-low active power.
  • Typical active current: 1 mA @ f = 1 MHz.
  • Typical active current: 6 mA @ f = fmax Ultra low standby power Easy memory expansion with CE, and OE features Automatic power-down when deselected CMOS for optimum speed/power Packages offered 48-ball BGA mode reducing power consumption by more than 99% when deselecte.

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Datasheet preview – CY62147DV18

Datasheet Details

Part number CY62147DV18
Manufacturer Cypress Semiconductor
File Size 698.86 KB
Description 4-Mb (256K x 16) Static RAM
Datasheet download datasheet CY62147DV18 Datasheet
Additional preview pages of the CY62147DV18 datasheet.

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Full PDF Text Transcription

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CY62147DV18 MoBL2™ 4-Mb (256K x 16) Static RAM Features • • • • Very high speed: 55 ns and 70 ns Wide voltage range: 1.65V – 2.25V Pin-compatible with CY62147CV18 Ultra-low active power — Typical active current: 1 mA @ f = 1 MHz — Typical active current: 6 mA @ f = fmax Ultra low standby power Easy memory expansion with CE, and OE features Automatic power-down when deselected CMOS for optimum speed/power Packages offered 48-ball BGA mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH).
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