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CY62147GN - 4-Mbit (256K words x 16 bit) Static RAM

General Description

CY62147GN and CY621472GN are high-performance CMOS low-power (MoBL) SRAM devices organized as 256K Words by 16-bits.

Both devices are offered in single and dual chip enable options and in multiple pin configurations.

Key Features

  • High speed: 45 ns/55 ns.
  • Ultra-low standby power.
  • Typical standby current: 3.5 A.
  • Maximum standby current: 8.7 A.
  • Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V.
  • 1.0-V data retention.
  • TTL-compatible inputs and outputs.
  • Pb-free 48-ball VFBGA and 44-pin TSOP II packages Functional.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY62147GN/CY621472GN MoBL® 4-Mbit (256K words × 16 bit) Static RAM 4-Mbit (256K words × 16 bit) Static RAM Features ■ High speed: 45 ns/55 ns ■ Ultra-low standby power ❐ Typical standby current: 3.5 A ❐ Maximum standby current: 8.7 A ■ Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V ■ 1.0-V data retention ■ TTL-compatible inputs and outputs ■ Pb-free 48-ball VFBGA and 44-pin TSOP II packages Functional Description CY62147GN and CY621472GN are high-performance CMOS low-power (MoBL) SRAM devices organized as 256K Words by 16-bits. Both devices are offered in single and dual chip enable options and in multiple pin configurations. Devices with a single chip enable input are accessed by asserting the chip enable (CE) input LOW.