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CY62147GN Datasheet 4-mbit (256k Words X 16 Bit) Static Ram

Manufacturer: Cypress (now Infineon)

Overview: CY62147GN/CY621472GN MoBL® 4-Mbit (256K words × 16 bit) Static RAM 4-Mbit (256K words × 16 bit) Static.

General Description

CY62147GN and CY621472GN are high-performance CMOS low-power (MoBL) SRAM devices organized as 256K Words by 16-bits.

Both devices are offered in single and dual chip enable options and in multiple pin configurations.

Devices with a single chip enable input are accessed by asserting the chip enable (CE) input LOW.

Key Features

  • High speed: 45 ns/55 ns.
  • Ultra-low standby power.
  • Typical standby current: 3.5 A.
  • Maximum standby current: 8.7 A.
  • Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V.
  • 1.0-V data retention.
  • TTL-compatible inputs and outputs.
  • Pb-free 48-ball VFBGA and 44-pin TSOP II packages Functional.

More Datasheets from Cypress (now Infineon)

Part Number Description
CY62147G 4-Mbit (256K words x 16 bit) Static RAM
CY62147G18 4-Mbit (256K words x 16 bit) Static RAM
CY62147GE 4-Mbit (256K words x 16 bit) Static RAM
CY62147GE 4-Mbit (256K words x 16 bit) Static RAM
CY62147GE18 4-Mbit (256K words x 16 bit) Static RAM
CY62147GE30 4-Mbit (256K words x 16 bit) Static RAM
CY621472E30 4-Mbit (256 K x 16) Static RAM
CY621472G 4-Mbit (256K words x 16 bit) Static RAM
CY621472G30 4-Mbit (256K words x 16 bit) Static RAM
CY621472GN 4-Mbit (256K words x 16 bit) Static RAM

CY62147GN Distributor