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CY62157DV18 - 8M (512K x 16) Static RAM

General Description

The CY62157DV18 is a high-performance CMOS static RAM organized as 512K words by 16 bits.

Key Features

  • Very high speed: 55 ns and 70 ns.
  • Voltage range: 1.65V to 1.95V.
  • Pin compatible with CY62157CV18.
  • Ultra-low active power.
  • Typical active current: 1 mA @ f = 1 MHz.
  • Typical active current: 10 mA @ f = fMAX.
  • Ultra-low standby power.
  • Easy memory expansion with CE1, CE2, and OE features.
  • Automatic power-down when deselected.
  • CMOS for optimum speed/power.
  • Packages offered in a 48-ball FBGA Functional D.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY62157DV18 MoBL2 Features • Very high speed: 55 ns and 70 ns • Voltage range: 1.65V to 1.95V • Pin compatible with CY62157CV18 • Ultra-low active power — Typical active current: 1 mA @ f = 1 MHz — Typical active current: 10 mA @ f = fMAX • Ultra-low standby power • Easy memory expansion with CE1, CE2, and OE features • Automatic power-down when deselected • CMOS for optimum speed/power • Packages offered in a 48-ball FBGA Functional Description[1] The CY62157DV18 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones.