CY62157EV18
Overview
- Very high speed: 55 ns
- Wide voltage range: 1.65 V-2.25 V
- Pin compatible with CY62157DV18 and CY62157DV20
- Ultra low standby power ❐ Typical Standby current: 2 A ❐ Maximum Standby current: 8 A
- Ultra low active power ❐ Typical active current: 6 mA at f = 1 MHz
- Easy memory expansion with CE1, CE2 and OE features
- Automatic power down when deselected
- Complementary metal oxide semiconductor (CMOS) for optimum speed and power
- Available in Pb-free 48-ball very fine-pitch ball grid array (VFBGA) package Functional Description The CY62157EV18 is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when:
- Deselected (CE1 HIGH or CE2 LOW)
