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CY62157EV18 MoBL
8-Mbit (512K × 16) Static RAM
8-bit (512K x 16) Static RAM
Features
■ Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power
❐ Typical Standby current: 2 A ❐ Maximum Standby current: 8 A ■ Ultra low active power ❐ Typical active current: 6 mA at f = 1 MHz ■ Easy memory expansion with CE1, CE2 and OE features ■ Automatic power down when deselected ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Available in Pb-free 48-ball very fine-pitch ball grid array (VFBGA) package
Functional Description
The CY62157EV18 is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current.
CY62157EV18 Datasheet
