Datasheet4U Logo Datasheet4U.com

CY62158E - 8-Mbit (1 M x 8) Static RAM

Description

The CY62158E MoBL® is a high performance CMOS static RAM organized as 1024K words by 8 bits.

Features

  • Very high speed: 45 ns.
  • Wide voltage range: 4.5 V.
  • 5.5 V.
  • Ultra low active power.
  • Typical active current:1.8 mA at f = 1 MHz.
  • Typical active current: 18 mA at f = fmax.
  • Ultra low standby power.
  • Typical standby current: 2 μA.
  • Maximum standby current: 8 μA.
  • Easy memory expansion with CE1, CE2 and OE features.
  • Automatic power down when deselected.
  • CMOS for optimum speed and power.
  • Offered in Pb-free 44-pin TSOP II package Functiona.

📥 Download Datasheet

Datasheet preview – CY62158E

Datasheet Details

Part number CY62158E
Manufacturer Cypress Semiconductor
File Size 791.54 KB
Description 8-Mbit (1 M x 8) Static RAM
Datasheet download datasheet CY62158E Datasheet
Additional preview pages of the CY62158E datasheet.
Other Datasheets by Cypress Semiconductor

Full PDF Text Transcription

Click to expand full text
CY62158E MoBL® 8-Mbit (1 M × 8) Static RAM 8-Mbit (1 M × 8) Static RAM Features ■ Very high speed: 45 ns ❐ Wide voltage range: 4.5 V–5.5 V ■ Ultra low active power ❐ Typical active current:1.8 mA at f = 1 MHz ❐ Typical active current: 18 mA at f = fmax ■ Ultra low standby power ❐ Typical standby current: 2 μA ❐ Maximum standby current: 8 μA ■ Easy memory expansion with CE1, CE2 and OE features ■ Automatic power down when deselected ■ CMOS for optimum speed and power ■ Offered in Pb-free 44-pin TSOP II package Functional Description The CY62158E MoBL® is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications.
Published: |