Description
The CY62167EV18 is a high performance CMOS static RAM organized as 1M words by 16 bits.
Features
- Very high speed: 55 ns.
- Wide voltage range: 1.65 V to 2.25 V.
- Ultra low standby power.
- Typical standby current: 1.5 A.
- Maximum standby current: 12 A.
- Ultra low active power.
- Typical active current: 2.2 mA at f = 1 MHz.
- Easy memory expansion with CE1, CE2, and OE features.
- Automatic power down when deselected.
- CMOS for optimum speed and power.
- Offered in Pb-free 48-ball very fine ball grid array (VFBGA) packages
Functional.
CY62167EV18 Datasheet
