CY62167EV18 Datasheet | Cypress

CY62167EV18 Mo BL® 16-Mbit (1 M × 16) Static RAM 16-Mbit (1 M × 16) Static RAM Features - Very high speed: 55 ns - Wide voltage range: 1.65 V to 2.25 V - Ultra low standby power - Typical standby current: 1.5 A - Maximum standby current: 12 A - Ultra low active power - Typical active current: 2.2 m A at f = 1 MHz - Easy memory expansion with CE1, CE2, and OE Features - Automatic power down when deselected - CMOS for optimum speed and power - Offered in Pb-free 48-ball very fine ball grid array (VFBGA) packages Functional Description The CY62167EV18 is a high performance CMOS static RAM organized as 1M words by 16 bits. This device Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (Mo BL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device...