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CY62167EV18 - 16-Mbit (1M x 16) Static RAM

General Description

The CY62167EV18 is a high performance CMOS static RAM organized as 1M words by 16 bits.

Key Features

  • Very high speed: 55 ns.
  • Wide voltage range: 1.65 V to 2.25 V.
  • Ultra low standby power.
  • Typical standby current: 1.5 A.
  • Maximum standby current: 12 A.
  • Ultra low active power.
  • Typical active current: 2.2 mA at f = 1 MHz.
  • Easy memory expansion with CE1, CE2, and OE features.
  • Automatic power down when deselected.
  • CMOS for optimum speed and power.
  • Offered in Pb-free 48-ball very fine ball grid array (VFBGA) packages Functional.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY62167EV18 MoBL® 16-Mbit (1 M × 16) Static RAM 16-Mbit (1 M × 16) Static RAM Features ■ Very high speed: 55 ns ■ Wide voltage range: 1.65 V to 2.25 V ■ Ultra low standby power ❐ Typical standby current: 1.5 A ❐ Maximum standby current: 12 A ■ Ultra low active power ❐ Typical active current: 2.2 mA at f = 1 MHz ■ Easy memory expansion with CE1, CE2, and OE features ■ Automatic power down when deselected ■ CMOS for optimum speed and power ■ Offered in Pb-free 48-ball very fine ball grid array (VFBGA) packages Functional Description The CY62167EV18 is a high performance CMOS static RAM organized as 1M words by 16 bits. This device features advanced circuit design to provide ultra low active current.