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CY62168EV30 - 16-Mbit (2 M x 8) Static RAM

General Description

of read and write modes.

The CY62168EV30 is a high performance CMOS static RAM organized as 2 M words by 8-bits.

Key Features

  • Very high speed: 45 ns Wide voltage range: 2.20 V to 3.60 V Ultra low standby power.
  • Typical standby current: 1.5 µA.
  • Maximum standby current: 12 µA Ultra low active power.
  • Typical active current: 2.2 mA at f = 1 MHz Easy memory expansion with CE1, CE2 and OE features Automatic power-down when deselected CMOS for optimum speed/power Offered in Pb-free 48-ball FBGA package. For Pb-free 48-pin TSOP I package, refer to CY62167EV30 datasheet.
  • automatic power.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY62168EV30 MoBL® 16-Mbit (2 M × 8) Static RAM 16-Mbit (2 M × 8) Static RAM Features ■ ■ ■ Very high speed: 45 ns Wide voltage range: 2.20 V to 3.60 V Ultra low standby power ❐ Typical standby current: 1.5 µA ❐ Maximum standby current: 12 µA Ultra low active power ❐ Typical active current: 2.2 mA at f = 1 MHz Easy memory expansion with CE1, CE2 and OE features Automatic power-down when deselected CMOS for optimum speed/power Offered in Pb-free 48-ball FBGA package. For Pb-free 48-pin TSOP I package, refer to CY62167EV30 datasheet. ■ automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling.